Datasheet4U Logo Datasheet4U.com

G65P06D5 - P-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -65A < 20mΩ Schematic diagram.

📥 Download Datasheet

Datasheet preview – G65P06D5

Datasheet Details

Part number G65P06D5
Manufacturer GOFORD
File Size 644.92 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G65P06D5 Datasheet
Additional preview pages of the G65P06D5 datasheet.

📁 Similar Datasheet

  • G656 - Microprocessor Reset IC (Global Mixed-mode Technology)
  • G657 - Microprocessor Reset IC (Global Mixed-mode Technology)
  • G65SC02 - CMOS G65SC02-A 8-BIT MICROPROCESSOR (California Micro Devices Corp)
  • G65SC150 - CMOS COMMUNICATIONS TERMINAL UNIT (California Micro Devices Corp)
  • G65SC151 - ADV-CMOS COMMUNICATIONS TERMINAL UNIT (California Micro Devices Corp)
  • G65SC21 - CMOS Peripheral Interface Adapter (California Micro Devices Corp)
  • G65SC22 - CMOS VERSATILE INTERFACE ADAPTER (California Micro Devices Corp)
  • G65SC51 - CMOS ASYNCHRONOUS COMMUNICATIONS INTERFACE ADAPTER (California Micro Devices Corp)
  • G65SC802 - CMOS 8/16-BIT MICROPROCESSOR (California Micro Devices Corp)
  • G65SC816 - CMOS 8/16-BIT MICROPROCESSOR (CALIFORNIA MICRO DEVICES)
Other Datasheets by GOFORD
  • G65P06 - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
G65P06D5 P-Channel Enhancement Mode Power MOSFET Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Published: |