G65P06D5 - P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -65A < 20mΩ Schematic diagram.

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G65P06D5 p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G65P06D5
Manufacturer	GOFORD
File Size	644.92 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G65P06D5 Datasheet

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Other Datasheets by GOFORD

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G65P06	P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

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G65P06D5 P-Channel Enhancement Mode Power MOSFET Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.