GOFORD
8205A
P R ODUC T S UMMAR Y
VDSS RDS(ON) ID
@ 4.0V (typ)
20V
21mΩ
4A
- D1
D2
G1
G2
S1
S2
F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable. S urface Mount P ackage.
S1 D1/D2
S2
S OT 26 Top View
16 25 34
G1 D1/D2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
10
V
Drain C urrent-C ontinuous a @ TJ=25 C
ID
4
A
-P ulsed b
IDM
25
A
Drain-S ource Diode Forward C urrent a
IS
1.25
A
Maximum P ower Dissipation a
PD
1.25
W
Operating Junction and S torage Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
100
C /W
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