8205A - Dual N-Channel MOSFET

HSMC

General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

Key Features

RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A.
High Density Cell Design for Ultra Low On-Resistance.
High Power and Current Handing Capability.
Fully Characterized Avalanche Voltage and Current.
Ideal for Li ion Battery Pack.

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8205A dual n-channel mosfet by HSMC - Datasheet Preview

Datasheet Details

Part number	8205A
Manufacturer	HSMC
File Size	41.50 KB
Description	Dual N-Channel MOSFET
Datasheet	8205A Datasheet

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Full PDF Text Transcription (Reference)

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200701 Issued Date : 2007.03.01 Revised Date : 2007.03.12 Page No. : 1/4 8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 8-Lead Plastic TSSOP-8L 8205A Symbol & Pin Assignment Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 8 7 6 5 Q2 Q1 1 2 3 4 Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain Features • RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.