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8205A - Dual N-Channel Enhancement Mode MOSFET

Datasheet Summary

Features

  • 20V 5A N-channel Trench Mosfet.
  • RDSON≤27mΩ @Vgs=4.5V, Id=5A.
  • RDSON≤36mΩ @Vgs=2.5V, Id=3A.
  • Low gate Charge.
  • Fast switching capability.
  • High reliability and rugged SYMBOL.

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Datasheet Details

Part number 8205A
Manufacturer UMW
File Size 653.14 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet 8205A Datasheet
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    Full PDF Text Transcription

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    UMW R UMW 8205A Dual N-Channel Enhancement Mode MOSFET FEATURES ·20V 5A N-channel Trench Mosfet ·RDSON≤27mΩ @Vgs=4.5V, Id=5A ·RDSON≤36mΩ @Vgs=2.5V, Id=3A ·Low gate Charge ·Fast switching capability ·High reliability and rugged SYMBOL APPLIACTION ·Portable Equipment ·Battery Powered System ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(Note1) Continuous Pulsed Power Dissipation (TA=25°C) (Note 2) TA=25°C TA=100°C Thermal Resistance-Junction to Ambient Maximum Junction Temperature Storage Temperature Range Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Pulse width limited by TJ(MAX) Symbol VDSS VGSS ID IDM PD RθJA TJ TSTG Rating 20 ±12 5 20 0.83 0.
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