8205A Datasheet | RZC Microelectronics

Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch . Features l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A) RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A) RDS(on) = 60mΩ (typ.)(VGS = 2.5V, ID = 2.0A) l Lead free product is acquired l Surface Mount Package APPLICATION l Battery protection l Load switch l Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking 8205A Device 8250A Device...