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IRF820B - 500V N-Channel MOSFET

IRF820B Description

IRF820B/IRFS820B November 2001 IRF820B/IRFS820B 500V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRF820B Features

* 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum R

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Datasheet Details

Part number
IRF820B
Manufacturer
Fairchild Semiconductor
File Size
858.43 KB
Datasheet
IRF820B_FairchildSemiconductor.pdf
Description
500V N-Channel MOSFET

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500V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRF820B-like datasheet