* 6.2A, 600V
* rDS(ON) = 1.200Ω
* Single Pulse Avalanche Energy Rated
* Simple Drive Requirements
* Ease of Paralleling
* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART
IRFBC40
Fairchild Semiconductor
91.86 KB
N-channel power mosfet.
IRFBC40
Data Sheet January 2002
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transist.
📁 Related Datasheet
IRFBC40 N-Channel Power MOSFET (STMicroelectronics)
IRFBC40 N-Channel Power MOSFET (Intersil Corporation)
IRFBC40 Power MOSFET (International Rectifier)
IRFBC40 Power MOSFET (Vishay)
IRFBC40 N-Channel Power MOSFETs (Harris)
IRFBC40 N-Channel MOSFET (INCHANGE)
IRFBC40A Power MOSFET (International Rectifier)
IRFBC40A Power MOSFET (Vishay)
IRFBC40A N-Channel MOSFET (INCHANGE)
IRFBC40APBF HEXFET Power MOSFET (International Rectifier)
