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IRFI614A - Power MOSFET

Product Overview

Fairchild Semiconductor

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IRFI614A Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFI614A

Datasheet Details

Part number	IRFI614A
Manufacturer	Fairchild Semiconductor
File Size	228.56 KB
Description	Power MOSFET
Datasheet	IRFI614A Datasheet
Additional preview pages of the IRFI614A datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
Lower RDS(ON): 1.393Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (.

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Other Datasheets by Fairchild Semiconductor

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Published: Aug 4, 2016 |