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IRFI614B - 250V N-Channel MOSFET

IRFI614B Description

IRFW614B / IRFI614B November 2001 IRFW614B / IRFI614B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFI614B Features

* 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D2-PAK IRFW Series G D S I2-PAK IR

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250V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI614B-like datasheet