IRFI630B 200V N-Channel MOSFET

Fairchild Semiconductor

Description

IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Specifications

Part number: IRFI630B
Manufacturer: Fairchild Semiconductor
File Size: 648.95 KB
Datasheet: IRFI630B_FairchildSemiconductor.pdf
Description: 200V N-Channel MOSFET

Features

* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

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IRFI630B 200V N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor IRFI630B-like datasheet