KST5551 Datasheet (Fairchild Semiconductor)

KST5551, Amplifier Transistor

KST5551 KST5551 Amplifier Transistor Collector-Emitter Voltage: VCEO=160V Collector Power Dissipation: PC (max)=350mW 3 2 1 SOT-23 Mark: G1 1.

Base 2.

Emitter 3.

Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 180 1