P16N25 Datasheet - Fairchild Semiconductor

P16N25 FQP16N25

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

P16N25 Features

* 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A

* Low Gate Charge (Typ. 27 nC)

* Low Crss (Typ. 23 pF)

* 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

P16N25 Datasheet (636.93 KB)