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P16NE06 - STP16NE06

This page provides the datasheet information for the P16NE06, a member of the P16NE06FP STP16NE06 family.

Datasheet Summary

Description

This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure.

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Datasheet preview – P16NE06

Datasheet Details

Part number P16NE06
Manufacturer STMicroelectronics
File Size 266.97 KB
Description STP16NE06
Datasheet download datasheet P16NE06 Datasheet
Additional preview pages of the P16NE06 datasheet.

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Full PDF Text Transcription

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STP16NE06 ® STP16NE06FP N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STP16NE06 www.DataSheet4U.ScoTmP16NE06FP 60 V 60 V < 0.100 Ω < 0.100 Ω 16 A 11 A s TYPICAL RDS(on) = 0.08 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s 175oC OPERATING TEMPERATURE s HIGH dV/dt CAPABILITY s APPLICATION ORIENTED CHARACTERIZATION PRELIMINARY DATA 3 2 1 3 2 1 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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