Datasheet Specifications
- Part number
- P4N60
- Manufacturer
- Fairchild Semiconductor
- File Size
- 290.43 KB
- Datasheet
- P4N60_FairchildSemiconductor.pdf
- Description
- SSP4N60
Description
www.DataSheet4U.com Advanced Power MOSFET .
Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. SouP4N60 Distributors
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