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P4N60

SSP4N60

P4N60 Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Sou

P4N60 Datasheet (290.43 KB)

Preview of P4N60 PDF

Datasheet Details

Part number:

P4N60

Manufacturer:

Fairchild Semiconductor

File Size:

290.43 KB

Description:

Ssp4n60.

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TAGS

P4N60 SSP4N60 Fairchild Semiconductor

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