P4N05L Datasheet - Intersil Corporation

P4N05L - RFP4N05L

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Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

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RFP4N05L, RFP4N06L www.DataSheet4U.com Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These types can be operated directly fr

P4N05L Features

* 4A, 50V and 60V

* rDS(ON) = 0.800Ω

* Design Optimized for 5V Gate Drives

* Can be Driven Directly from QMOS, NMOS, TTL Circuits

* Compatible with Automotive Drive Requirements

* SOA is Power-Dissipation Limited

* Nanosecond Switching Speeds

P4N05L_IntersilCorporation.pdf