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P55N06

FDP55N06

P55N06 Features

* RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A

* Low Gate Charge ( Typ. 30 nC)

* Low Crss ( Typ. 60 pF)

* 100% Avalanche Tested N-Channel UniFETTM MOSFET Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS t

P55N06 General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching po.

P55N06 Datasheet (1.36 MB)

Preview of P55N06 PDF

Datasheet Details

Part number:

P55N06

Manufacturer:

Fairchild Semiconductor

File Size:

1.36 MB

Description:

Fdp55n06.

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TAGS

P55N06 FDP55N06 Fairchild Semiconductor

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