P6N60 - FQP6N60

Fairchild Semiconductor

Datasheet Details

Part number	P6N60
Manufacturer	Fairchild ↗ Semiconductor
File Size	555.17 KB
Description	FQP6N60
Datasheet	P6N60_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current.

📁 P6N60 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Oct 25, 2010 |