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PF7N60 600V N-Channel MOSFET

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Description

FQPF7N60 * N-Channel QFET® MOSFET FQPF7N60 N-Channel QFET® MOSFET 600 V, 4.3 A, 1 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number
PF7N60
Manufacturer
Fairchild Semiconductor
File Size
447.03 KB
Datasheet
PF7N60-FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET

Features

* 4.3 A, 600 V, RDS(on) = 1.0 Ω (Max. ) @ VGS = 10 V, ID = 2.2 A
* Low Gate Charge (Typ. 29 nC)
* Low Crss (Typ. 16 pF)
* 100% Avalanche Tested D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

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