PFV218N50 Datasheet, Mosfet, Fairchild Semiconductor

PFV218N50 Features

• Mosfet
• 550V @TJ = 150°C
• Typ. RDS(on) = 0.265Ω @VGS = 10 V
• Low gate charge (typical 42 nC)
• Low Crss (typical 11 pF)
• Fast switching
• 10

PDF File Details

Part number:

PFV218N50

Manufacturer:

Fairchild Semiconductor

File Size:

1.18MB

Download:

📄 Datasheet

Description:

500v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

TAGS

PFV218N50

Fairchild Semiconductor

📁 Related Datasheet

PFV - CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS (Rubycon)
CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS (HYBRID TYPE) PFV PFV SERIES NEW CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITOR.

PF0010 - High Frequency Power MOS FET Module (Renesas Technology)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • • • Low voltage operation : 4..

PF0027 - MOS FET Power Amplifier Module (Renesas Technology)
.. .. .. .. .. .. .. .

PF0030 - MOS FET Power Amplifier (Hitachi Semiconductor)
PF0030 Series MOS FET Power Amplifier ADE-208-460 (Z) 1st Edition July 1996 Features • High stability: Load VSWR = 20 : 1 • Low power control current.

PF0031 - MOS FET Power Amplifier Module (Hitachi)
w w at .D w h FET Power Amplifier Module for Mobile Phone MOS S a ADE-208-461 (Z) 1st Edition July 1, 1996 ee U 4 t m o .c PF0031 Application P.

PF0032 - MOS FET Power Amplifier (Hitachi Semiconductor)
PF0030 Series MOS FET Power Amplifier ADE-208-460 (Z) 1st Edition July 1996 Features • High stability: Load VSWR = 20 : 1 • Low power control current.

PF0100 - 14-channel configurable power management (NXP)
NXP Semiconductors Data sheet: Technical Data 14 channel configurable power management integrated circuit Document Number: MMPF0100 Rev. 20, 5/2022 P.

PF0100Z - 14-channel configurable power management (NXP)
NXP Semiconductors Data sheet: Technical data Document Number: MMPF0100Z Rev. 13.0, 5/2023 14 channel configurable power management integrated circu.

PF0121 - MOS FET Power Amplifier Module for GSM Mobile Phone (Hitachi Semiconductor)
PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features.