Part number:
PFV218N50
Manufacturer:
Fairchild Semiconductor
File Size:
1.18 MB
Description:
500v n-channel mosfet.
* 550V @TJ = 150°C
* Typ. RDS(on) = 0.265Ω @VGS = 10 V
* Low gate charge (typical 42 nC)
* Low Crss (typical 11 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Description These N-Channel enhancement mode power field e
PFV218N50
Fairchild Semiconductor
1.18 MB
500v n-channel mosfet.
📁 Related Datasheet
PFV CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS (Rubycon)
PF0010 High Frequency Power MOS FET Module (Renesas Technology)
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)
PF0027 MOS FET Power Amplifier Module (Renesas Technology)
PF0030 MOS FET Power Amplifier (Hitachi Semiconductor)
PF0031 MOS FET Power Amplifier Module (Hitachi)
PF0032 MOS FET Power Amplifier (Hitachi Semiconductor)
PF0100 14-channel configurable power management (NXP)
PF0100Z 14-channel configurable power management (NXP)
PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone (Hitachi Semiconductor)