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PFV218N50

500V N-Channel MOSFET

PFV218N50 Features

* 550V @TJ = 150°C

* Typ. RDS(on) = 0.265Ω @VGS = 10 V

* Low gate charge (typical 42 nC)

* Low Crss (typical 11 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Description These N-Channel enhancement mode power field e

PFV218N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

PFV218N50 Datasheet (1.18 MB)

Preview of PFV218N50 PDF

Datasheet Details

Part number:

PFV218N50

Manufacturer:

Fairchild Semiconductor

File Size:

1.18 MB

Description:

500v n-channel mosfet.

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TAGS

PFV218N50 500V N-Channel MOSFET Fairchild Semiconductor

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