Part number:
SFU9220
Manufacturer:
Fairchild Semiconductor
File Size:
257.47 KB
Description:
Advanced power mosfet.
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 Ω (Typ.) 1 SFR/U9220 BVDSS = -200 V RDS(on) = 1.5 Ω ID = -3.1 A D-PAK 2 1 3 I-PAK 2 3 1. Ga
SFU9220
Fairchild Semiconductor
257.47 KB
Advanced power mosfet.
📁 Related Datasheet
SFU9224 - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SFU9210 - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
SFU9214 - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extende.
SFU9230B - 200V P-Channel MOSFET
(Fairchild Semiconductor)
SFR9230B / SFU9230B
SFR9230B / SFU9230B
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are.
SFU9014 - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende.
SFU9024 - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende.
SFU9034 - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extende.
SFU9110 - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende.
