SS2N60B - SSS2N60B

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	SS2N60B
Manufacturer	Fairchild Semiconductor
File Size	894.54 KB
Description	SSS2N60B
Datasheet	SS2N60B Datasheet
Additional preview pages of the SS2N60B datasheet.

Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.

Features

2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Con.

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Published: Sep 19, 2008 |