Datasheet4U Logo Datasheet4U.com

Si9955DY

Dual N-Channel MOSFET

Si9955DY Features

* • 3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V RDS(ON) = 0.200 Ω @ VGS = 4.5 V • Low gate charge. • Fast switching speed. • High power and current handling capability. ' ' ' '   62

*  6

*  6   $EVROXWH 0D[LPXP 5DWLQJV $U Ã2Ã!$

* 8ȁyr††Ã‚‡ur…v†rÁ‚‡rq 6PERO 3DUDPHWHU

Si9955DY General Description

These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications wher.

Si9955DY Datasheet (195.55 KB)

Preview of Si9955DY PDF

Datasheet Details

Part number:

Si9955DY

Manufacturer:

Fairchild Semiconductor

File Size:

195.55 KB

Description:

Dual n-channel mosfet.

📁 Related Datasheet

Si9955DY Dual N-Channel Enhancement-Mode MOSFET (TEMIC)

Si9950DY Complementary MOSFET Half-Bridge (TEMIC)

Si9952DY Dual Enhancement-Mode MOSFET (TEMIC)

SI9953DY Dual P-Channel 20-V (D-S) MOSFET (Vishay Siliconix)

Si9956DY Dual N-Channel 20-V (D-S) MOSFET (Vishay)

SI9956DY N-channel enhancement mode field-effect transistor (NXP)

SI9958DY Complementary 20-V (D-S) MOSFET (Vishay Siliconix)

Si9959DY Dual N-Channel Enhancement-Mode MOSFET (TEMIC)

SI9910 Adaptive Power MOSFET Driver1 (Vishay Siliconix)

SI9912 Half-Bridge MOSFET Driver for Switching Power Supplies (Vishay Siliconix)

TAGS

Si9955DY Dual N-Channel MOSFET Fairchild Semiconductor

Image Gallery

Si9955DY Datasheet Preview Page 2 Si9955DY Datasheet Preview Page 3

Si9955DY Distributor