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USB10H Datasheet - Fairchild Semiconductor

USB10H Dual P-Channel 2.5V Specified PowerTrench MOSFET

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

USB10H Features

* -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V

* Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller t

USB10H_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

USB10H

Manufacturer:

Fairchild Semiconductor

File Size:

241.25 KB

Description:

Dual p-channel 2.5v specified powertrench mosfet.

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USB10H USB10H Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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