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USB10H

Dual P-Channel 2.5V Specified PowerTrench MOSFET

USB10H Features

* -1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V RDS(on) = 0.250Ω @ VGS = -2.5 V

* Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller t

USB10H General Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

USB10H Datasheet (241.25 KB)

Preview of USB10H PDF

Datasheet Details

Part number:

USB10H

Manufacturer:

Fairchild Semiconductor

File Size:

241.25 KB

Description:

Dual p-channel 2.5v specified powertrench mosfet.

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USB10H Dual P-Channel 2.5V Specified PowerTrench MOSFET Fairchild Semiconductor

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