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USB10P Datasheet - Fairchild Semiconductor

P-Channel 2.5V Specified PowerTrenchTM MOSFET

USB10P Features

* -4.5 A, -20 V. RDS(ON) = 0.045 Ω @ VGS = -4.5 V RDS(ON) = 0.065 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-23 SuperSOTTM-6 Supe

USB10P General Description

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power ap.

USB10P Datasheet (279.75 KB)

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Datasheet Details

Part number:

USB10P

Manufacturer:

Fairchild Semiconductor

File Size:

279.75 KB

Description:

P-channel 2.5v specified powertrenchtm mosfet.

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USB10P P-Channel 2.5V Specified PowerTrenchTM MOSFET Fairchild Semiconductor

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