USB10P - P-Channel 2.5V Specified PowerTrenchTM MOSFET

Fairchild Semiconductor

USB10P Datasheet Preview — Preview of USB10P PDF

Datasheet Details

Part number	USB10P
Manufacturer	Fairchild ↗ Semiconductor
File Size	279.75 KB
Description	P-Channel 2.5V Specified PowerTrenchTM MOSFET
Datasheet	USB10P_FairchildSemiconductor.pdf

USB10P Product details

Description

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-4.5 A, -20 V. RDS(ON) = 0.045 Ω @ VGS = -4.5 V RDS(ON) = 0.065 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 2 G D D pin 1 TM 5 3 4 SuperSOT -6 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise note Ratings Units VDSS VGSS ID PD Drai.

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Published: Apr 16, 2005 |