NDB4060L Datasheet - Fairchild

NDB4060L N-Channel MOSFET

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta.

NDB4060L Features

* 15A, 60V. RDS(ON) = 0.1Ω @ VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

NDB4060L_FairchildSemiconductor.pdf