Datasheet4U Logo Datasheet4U.com

NDP410BE N-Channel Enhancement Mode Field Effect Transistor

NDP410BE Description

May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General D.
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDP410BE Features

* 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in

📥 Download Datasheet

Preview of NDP410BE PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NDP410BE
Manufacturer
Fairchild
File Size
74.01 KB
Datasheet
NDP410BE_FairchildSemiconductor.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

📁 Related Datasheet

  • NDP02N60Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP03N60Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP04N62Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP05N50Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP06N60Z - Single N-Channel TO-220FP MOSFET (ON Semiconductor)
  • NDP06N62Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP08N50Z - N-Channel Power MOSFET (ON Semiconductor)
  • NDP08N60Z - N-Channel Power MOSFET (ON Semiconductor)

📌 All Tags

N-Channel Enhancement Mode Field Effect Transistor Fairchild
Fairchild NDP410BE-like datasheet