NDP410BE Datasheet, Transistor, Fairchild

NDP410BE Features

• Transistor 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external

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NDP410BE

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Fairchild

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor. These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS t

NDP410BE Application

• Applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power lo

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NDP410BE

Fairchild

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