* 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in
NDP410BE
Fairchild
74.01 KB
N-channel enhancement mode field effect transistor.
May 1994
NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor
General D.
📁 Related Datasheet
NDP410B N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP410A N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP410AE N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP4050 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP4060 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP408 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP408A N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP408AE N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
