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NDP410BE Datasheet - Fairchild

NDP410BE N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDP410BE Features

* 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in

NDP410BE Datasheet (74.01 KB)

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Datasheet Details

Part number:

NDP410BE

Manufacturer:

Fairchild

File Size:

74.01 KB

Description:

N-channel enhancement mode field effect transistor.

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