NDP06N62Z - N-Channel Power MOSFET

ON Semiconductor

Datasheet Details

Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb.
Free and RoHS Compliant VDSS 620 V Rating Drain.
to.
Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate.
to.
Source Voltage Single Pulse Avalanche Energy, ID = 6.0 A ESD (HBM) (JESD 22.
A114) RMS Isolation Voltage (t = 0.3 sec. , R. H. ≤ 30%,.

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