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NDP510AE

N-Channel Enhancement Mode Field Effect Transistor

NDP510AE Features

* 15 and 13A, 100V. RDS(ON) = 0.12 and 0.15Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/

NDP510AE General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ener.

NDP510AE Datasheet (72.50 KB)

Preview of NDP510AE PDF

Datasheet Details

Part number:

NDP510AE

Manufacturer:

Fairchild

File Size:

72.50 KB

Description:

N-channel enhancement mode field effect transistor.
May 1994 NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General D.

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NDP510AE N-Channel Enhancement Mode Field Effect Transistor Fairchild

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