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5N150UF SGF5N150UF

5N150UF Description

SGF5N150UF IGBT SGF5N150UF General .
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses.

5N150UF Features

* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A

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SGF5N150UF Fairchild Semiconductor
Fairchild Semiconductor 5N150UF-like datasheet