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8N60C FQB8N60C

8N60C Description

www.DataSheet.co.kr FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

8N60C Features

* 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
* Low gate charge ( typical 28 nC)
* Low Crss ( typical 12 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC

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📁 Related Datasheet

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FQB8N60C Fairchild Semiconductor
Fairchild Semiconductor 8N60C-like datasheet