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P4N60 SSP4N60

P4N60 Description

www.DataSheet4U.com Advanced Power MOSFET .

P4N60 Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Sou

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