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LPV3000 Datasheet - Filtronic Compound Semiconductors

LPV3000 2W Power PHEMT

AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic .

LPV3000 Features

* DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT

* +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD

LPV3000_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

LPV3000

Manufacturer:

Filtronic Compound Semiconductors

File Size:

49.75 KB

Description:

2w power phemt.

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TAGS

LPV3000 LPV3000 Power PHEMT Filtronic Compound Semiconductors

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