LPV3000 Datasheet (Filtronic Compound Semiconductors)

LPV3000, 2W Power PHEMT

AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate.

The recessed “mushroom” gate structure minimizes parasitic

LPV3000 Features

* DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT

* +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD