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LPV3000 2W Power PHEMT

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Description

Filtronic Solid State .
AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

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Features

* DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT
* +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD

Applications

* The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and g

LPV3000 Distributors

📁 Related Datasheet

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  • LPV324-N - Quad General-Purpose Rail-to-Rail Output Operational Amplifier (Texas Instruments)
  • LPV358 - Rail-to-Rail Output Operational Amplifiers (National Semiconductor)
  • LPV358-N - Dual General-Purpose Rail-to-Rail Output Operational Amplifier (Texas Instruments)

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Power PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors LPV3000-like datasheet