Part number:
LPV3000
Manufacturer:
Filtronic Compound Semiconductors
File Size:
49.75 KB
Description:
2w power phemt.
LPV3000_FiltronicCompoundSemiconductors.pdf
Datasheet Details
Part number:
LPV3000
Manufacturer:
Filtronic Compound Semiconductors
File Size:
49.75 KB
Description:
2w power phemt.
LPV3000, 2W Power PHEMT
AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic
LPV3000 Features
* DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT
* +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD
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