LPV3000 - 2W Power PHEMT

Filtronic Compound Semiconductors

LPV3000 Datasheet Preview — Preview of LPV3000 PDF

Datasheet Details

Part number	LPV3000
Manufacturer	Filtronic Compound Semiconductors
File Size	49.75 KB
Description	2W Power PHEMT
Datasheet	LPV3000_FiltronicCompoundSemiconductors.pdf

LPV3000 Product details

Description

AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 3000 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimized for reliable high-power applications.The LP3000 also

Features

DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT.
+33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD (x4) DIE SIZE: 28.3 x 16.5 mils (720 x 420 µm) DIE.

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Published: Apr 25, 2005 |