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LPV1500 Datasheet - Filtronic Compound Semiconductors

LPV1500 PACKAGED LOW NOISE PHEMT

AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic.

LPV1500 Features

* LPV1500 1 W Power PHEMT DRAIN DRAIN

* +31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE

LPV1500_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

LPV1500

Manufacturer:

Filtronic Compound Semiconductors

File Size:

33.36 KB

Description:

Packaged low noise phemt.

LPV1500 Distributor

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LPV1500 LPV1500 PACKAGED LOW NOISE PHEMT Filtronic Compound Semiconductors