LPV1500 - PACKAGED LOW NOISE PHEMT

Filtronic Compound Semiconductors

LPV1500 Datasheet Preview — Preview of LPV1500 PDF

Datasheet Details

Part number	LPV1500
Manufacturer	Filtronic Compound Semiconductors
File Size	33.36 KB
Description	PACKAGED LOW NOISE PHEMT
Datasheet	LPV1500_FiltronicCompoundSemiconductors.pdf

LPV1500 Product details

Description

AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimized for reliable high-power applications.The LP1V500 also

Features

LPV1500 1 W Power PHEMT DRAIN DRAIN.
+31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE GATE DIE SIZE: 16.5 x 16.1 mils (420 x 410 µm) DIE.

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Published: Apr 25, 2005 |