Part number:
LPV1500
Manufacturer:
Filtronic Compound Semiconductors
File Size:
33.36 KB
Description:
Packaged low noise phemt.
LPV1500_FiltronicCompoundSemiconductors.pdf
Datasheet Details
Part number:
LPV1500
Manufacturer:
Filtronic Compound Semiconductors
File Size:
33.36 KB
Description:
Packaged low noise phemt.
LPV1500, PACKAGED LOW NOISE PHEMT
AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic
LPV1500 Features
* LPV1500 1 W Power PHEMT DRAIN DRAIN
* +31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE
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