Datasheet4U Logo Datasheet4U.com

LPV1500

PACKAGED LOW NOISE PHEMT

LPV1500 Features

* LPV1500 1 W Power PHEMT DRAIN DRAIN

* +31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE

LPV1500 General Description

AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic.

LPV1500 Datasheet (33.36 KB)

Preview of LPV1500 PDF

Datasheet Details

Part number:

LPV1500

Manufacturer:

Filtronic Compound Semiconductors

File Size:

33.36 KB

Description:

Packaged low noise phemt.

📁 Related Datasheet

LPV3000 2W Power PHEMT (Filtronic Compound Semiconductors)

LPV321 Rail-to-Rail Output Operational Amplifiers (National Semiconductor)

LPV321-N Single General-Purpose Rail-to-Rail Output Operational Amplifier (Texas Instruments)

LPV324 Rail-to-Rail Output Operational Amplifiers (National Semiconductor)

LPV324-N Quad General-Purpose Rail-to-Rail Output Operational Amplifier (Texas Instruments)

LPV358 Rail-to-Rail Output Operational Amplifiers (National Semiconductor)

LPV358-N Dual General-Purpose Rail-to-Rail Output Operational Amplifier (Texas Instruments)

LPV511 Rail-to-Rail Input and Output Operational Amplifier (Texas Instruments)

LPV511 Rail-to-Rail Input and Output Operational Amplifier (National Semiconductor)

LPV521 Operational Amplifier (Texas Instruments)

TAGS

LPV1500 PACKAGED LOW NOISE PHEMT Filtronic Compound Semiconductors

Image Gallery

LPV1500 Datasheet Preview Page 2

LPV1500 Distributor