LPV1500 Datasheet (Filtronic Compound Semiconductors)

LPV1500, PACKAGED LOW NOISE PHEMT

AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.

The recessed “mushroom” gate structure minimizes parasitic

LPV1500 Features

* LPV1500 1 W Power PHEMT DRAIN DRAIN

* +31.5 dBm Typical Power at 18 GHz 8.5 dB Typical Power Gain at 18 GHz +27 dBm at 3.3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE