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FTK1N60I, FTK1N60P - N-CHANNEL MOSFET

FTK1N60I Description

SEMICONDUCTOR TECHNICAL DATA FTK1N60P / F / D / I 1.0 Amps, 600 Volts N-CHANNEL MOSFET .
The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resis.

FTK1N60I Features

* RDS(ON) = 9 .6Ω@VGS =10V
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.5 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness SYMBOL 2 Drain Power MOSFET I: 1 D: 1 TO -

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: FTK1N60I, FTK1N60P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
FTK1N60I, FTK1N60P
Manufacturer
First Silicon
File Size
215.55 KB
Datasheet
FTK1N60P-FirstSilicon.pdf
Description
N-CHANNEL MOSFET
Note
This datasheet PDF includes multiple part numbers: FTK1N60I, FTK1N60P.
Please refer to the document for exact specifications by model.

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N-CHANNEL MOSFET First Silicon
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