FTK1N60P N-CHANNEL MOSFET

First Silicon

Description

SEMICONDUCTOR TECHNICAL DATA FTK1N60P / F / D / I 1.0 Amps, 600 Volts N-CHANNEL MOSFET .
The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resis.

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Datasheet Specifications

Part number: FTK1N60P
Manufacturer: First Silicon
File Size: 215.55 KB
Datasheet: FTK1N60P-FirstSilicon.pdf
Description: N-CHANNEL MOSFET

Features

* RDS(ON) = 9 .6Ω@VGS =10V
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.5 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness SYMBOL 2 Drain Power MOSFET I: 1 D: 1 TO -

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