FMBT5550
Formosa MS
403.39kb
High voltage npn transistor.
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FMBT5551 - High Voltage NPN TRANSISTOR
(Formosa MS)
.
FMBT3904 - NPN EPITAXIAL PLANAR TRANSISTOR
(Formosa MS)
FORMOSA MICROSEMI CO., LTD.
Formosa MS
Spec. No. : FMSC003 Issued Date : 2002/12/25 Revised Date : Page No. : 1/3
FMBT3904
NPN EPITAXIAL PLANAR TRAN.
FMBT3906 - PNP EPITAXIAL PLANAR TRANSISTOR
(Formosa MS)
FORMOSA MICROSEMI CO., LTD.
Formosa MS
Spec. No. : FMSC001 Issued Date : 2002/12/13 Revised Date : 2002/12/25 Page No. : 1/3
FMBT3906
PNP EPITAXIAL .
FMB-22H - Schottky Barrier Diodes 20V
(Sanken electric)
Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
20V
Electrical Characteristics (Ta = 25°C) Oth.
FMB-22L - Schottky Barrier Diodes 20V
(Sanken electric)
Schottky Barrier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
20V
Electrical Characteristics (Ta = 25°C) Oth.
FMB-2306 - Schottky Diode
(Sanken electric)
VRM = 60 V, IF(AV) = 30 A Schottky Diode
FMB-2306
Data Sheet
Description
The FMB-2306 is a 60 V, 30 A Schottky diode with allowing improvements in V.
FMB-24 - Silicon Schottky Barrier Diode
(Sanken electric)
SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an FMB-24.
2. Outline
Type Silicon Schottky Barrier Diode
Structure
Re.
FMB-24H - Silicon Schottky Barrier Diode
(Sanken electric)
SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an FMB-24H.
2. Outline
Type
Silicon Schottky Barrier Diode
Structure.
FMB-24L - Silicon Schottky Barrier Diode
(Sanken electric)
SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an FMB-24L.
2. Outline High Frequency Rectification
Type
Silicon Scho.
FMB-24M - SILICON SCHOTTKY BARRIER DIODE
(Sanken electric)
SANKEN ELECTRIC COMPANY, LTD.
SPECIFICATIONS DEVICE TYPE NAME
SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M
1. Scope The present specifications shall.
