34652 Datasheet, Controller, Freescale Semiconductor

34652 Features

  • Controller
  • Integrated Power MOSFET and Control IC in a Small Outline Package
  • Input Voltage Operation Range from -15 V to - 80 V
  • Programmable Overcurrent Limit with Au

PDF File Details

Part number:

34652

Manufacturer:

Freescale Semiconductor

File Size:

1.36MB

Download:

📄 Datasheet

Description:

Negative voltage hot swap controller. of each pin can be found in the FUNCTIONAL PIN DESCRIPTION section beginning on page 10. Pin 1, 8, 9, 16 2 3 4, 5 6 7 10 11 12 13 Pin

Datasheet Preview: 34652 📥 Download PDF (1.36MB)
Page 2 of 34652 Page 3 of 34652

TAGS

34652
Negative
Voltage
Hot
Swap
Controller
Freescale Semiconductor

📁 Related Datasheet

34653 - Negative Voltage Hot Swap Controller (Freescale Semiconductor)
.. Freescale Semiconductor Advance Information Document Number: MC34653 Rev. 8.0, 2/2007 1.0 A Negative Voltage Hot Swap Controlle.

34671 - High Input Voltage 600mA Charger (Freescale Semiconductor)
.. Freescale Semiconductor Advance Information Document Number: MC34671 Rev. 1.0, 01/2008 High Input Voltage 600mA Charger for Sin.

34673 - High Input Voltage 1.2A Charger (NXP)
Freescale Semiconductor Advance Information Document Number: MC34673 Rev. 1.0, 01/2008 High Input Voltage 1.2A Charger for Single-cell Li-Ion Batter.

3400 - 5-Series Chipset (Intel)
Intel® 5 Series Chipset and Intel® 3400 Series Chipset Datasheet January 2012 Document Number: 322169-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN.

3400 - N-Channel MOSFET (GOFORD)
GOFORD DESCRIPTION The 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as .

3400 - N-Channel MOSFET (Doingter)
Description: This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w.

3401 - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

3401 - P-Channel MOSFET (CXW)
 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  Thi.

3401 - P-channel-enhanced MOS field-effect transistor (ChipSourceTek)
3401 RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP P MOS 1   SOT-23 D Drain D 3 k 1 2 e G S .

3401 - MOSFET (GFD)
3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2..

Stock and price

part
Phoenix Contact
HC-B10-BCFS-P-BK
DigiKey
1346526
32 In Stock
Qty : 1 units
Unit Price : $8.56
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts