34673
844.86kb
High input voltage 1.2a charger. of each pin can be found in the Functional Pin Description section beginning on page 11. Pin Number Pin Name Pin Function Formal Nam
TAGS
📁 Related Datasheet
34671 - High Input Voltage 600mA Charger
(Freescale Semiconductor)
.. Freescale Semiconductor
Advance Information
Document Number: MC34671 Rev. 1.0, 01/2008
High Input Voltage 600mA Charger for Sin.
34652 - Negative Voltage Hot Swap Controller
(Freescale Semiconductor)
.. Freescale Semiconductor
Advance Information
Document Number: MC34652 Rev. 8.0, 2/2007
2.0 A Negative Voltage Hot Swap Controlle.
34653 - Negative Voltage Hot Swap Controller
(Freescale Semiconductor)
..
Freescale Semiconductor Advance Information
Document Number: MC34653 Rev. 8.0, 2/2007
1.0 A Negative Voltage Hot Swap Controlle.
3400 - 5-Series Chipset
(Intel)
Intel® 5 Series Chipset and Intel® 3400 Series Chipset
Datasheet
January 2012
Document Number: 322169-004
INFORMATION IN THIS DOCUMENT IS PROVIDED IN.
3400 - N-Channel MOSFET
(GOFORD)
GOFORD
DESCRIPTION
The 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as .
3400 - N-Channel MOSFET
(Doingter)
Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w.
3401 - P-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.
3401 - P-Channel MOSFET
(CXW)
P-channel Enhancement Mode MOSFET
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Thi.
3401 - P-channel-enhanced MOS field-effect transistor
(ChipSourceTek)
3401
RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP
P MOS
1
SOT-23
D
Drain
D
3
k 1
2
e G
S
.
3401 - MOSFET
(GFD)
3401
DESCRIPTION
The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2..