MD7P19130HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev.0, 5/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel.
Short Ferrite Bead 47 μF, 50 V Electrolytic Capacitor 100 μF, 50 V Electrolitic Capacitor 1.

📥 Download Datasheet

MD7P19130HR3 Datasheet Preview — Preview of MD7P19130HR3 PDF

Datasheet Specifications

Part number: MD7P19130HR3
Manufacturer: Freescale Semiconductor
File Size: 530.11 KB
Datasheet: MD7P19130HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla

Applications

* with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1250 mA, Pout = 40 Watts Avg. , Full

MD7P19130HR3 Distributors

📁 Related Datasheet

MD7 MD7000 MD7001 MD7001F MD7002 MD7002A

📌 All Tags

MD7P19130HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MD7P19130HR3-like datasheet