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MD7P19130HR3 - RF Power Field Effect Transistors

MD7P19130HR3 Description

Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev.0, 5/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel.
Short Ferrite Bead 47 μF, 50 V Electrolytic Capacitor 100 μF, 50 V Electrolitic Capacitor 1.

MD7P19130HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla

MD7P19130HR3 Applications

* with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1250 mA, Pout = 40 Watts Avg. , Full

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Power Field Effect Transistors Freescale Semiconductor
Freescale Semiconductor MD7P19130HR3-like datasheet