MD7IC18120NR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifiers

MD7IC18120NR1, RF LDMOS Wideband Integrated Power Amplifiers

10 μF, 50 V Chip Capacitors 0.1 μF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitor 2.2 pF Chip Capacitors 1.5 pF Chip Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitor 330 μF, 35 V Electrolytic Capacitors 6.8 nH Chip Inductors 2.5 nH, 1 Turn Inductors 50 Ω, 1/8 W Chip Resistor 1000

Freescale Semiconductor Technical Data Document Number: MD7IC18120N www.DataSheet4U.com Rev.

0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on chip matching that makes it usable from 1805 to 1880 MHz.

This multi stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Typical Doherty Single Carrier W CDMA Performance: VD

MD7IC18120NR1 Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Large

* Signal Load

* Pull Parameters and Common Source S

* Parameters

* On

* Chip Matching (50 Ohm Input,