MD7IC2755NR1 - RF LDMOS Wideband Integrated Power Amplifiers

Datasheet Details

Part number	MD7IC2755NR1
Manufacturer	NXP
File Size	1.07 MB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	MD7IC2755NR1-NXP.pdf

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.

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Published: Oct 18, 2018 |