MD7IC2755NR1 Datasheet - NXP

MD7IC2755NR1 RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on chip matching that makes it usable from 2500 2700 MHz. This multi stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Typical Doherty WiMAX Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2B = 275 mA, VG2A = 1.7 Vdc, Pout = 10 Watts Avg., f = 2700 .

MD7IC2755NR1 Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* On

* Chip Matching (50 O

MD7IC2755NR1 Datasheet (1.07 MB)

MD7IC2755NR1 Datasheet Preview — Preview of MD7IC2755NR1 PDF

Datasheet Details

Part number:

MD7IC2755NR1

Manufacturer:

NXP ↗

File Size:

1.07 MB

Description:

Rf ldmos wideband integrated power amplifiers.

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MD7IC2755NR1 LDMOS Wideband Integrated Power Amplifiers NXP

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