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MD7IC2755NR1 RF LDMOS Wideband Integrated Power Amplifiers

MD7IC2755NR1 Description

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on

MD7IC2755NR1 Features

* Production Tested in a Symmetrical Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* On
* Chip Matching (50 O

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Datasheet Details

Part number
MD7IC2755NR1
Manufacturer
NXP ↗
File Size
1.07 MB
Datasheet
MD7IC2755NR1-NXP.pdf
Description
RF LDMOS Wideband Integrated Power Amplifiers

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LDMOS Wideband Integrated Power Amplifiers NXP
NXP MD7IC2755NR1-like datasheet