MD7IC2755NR1 Datasheet (NXP) - RF LDMOS Wideband Integrated Power Amplifiers

MD7IC2755NR1, RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on chip matching that makes it usable from 2500 2700 MHz.

This multi stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.

Typical Doherty WiMAX Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2B = 275 mA, VG2A = 1.7 Vdc, Pout = 10 Watts Avg., f = 2700

MD7IC2755NR1 Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* On

* Chip Matching (50 O