MD7IC21100NR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifiers

MD7IC21100NR1, RF LDMOS Wideband Integrated Power Amplifiers

10 μF, 50 V Chip Capacitors 5.1 pF Chip Capacitors 10 pF Chip Capacitor 1.2 pF Chip Capacitors 0.5 pF Chip Capacitor 0.1 μF, 100 V Chip Capacitors 1 μF, 100 V Chip Capacitors 4.7 KΩ, 1/4 W Chip Resistors 2 Ω,1/2 W Chip Resistors Part Number GRM55DR61H106KA88B ATC100B5R1CT500XT ATC100B100JT500XT ATC1

Freescale Semiconductor Technical Data Document Number: MD7IC21100N Rev.

0, 10/2008 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz.

This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA.

Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts,

MD7IC21100NR1 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters

* On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)

* Internally Matched for Ease of Use