MD7IC2755GNR1, MD7IC2755NR1 Datasheet - NXP

MD7IC2755GNR1 RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on chip matching that makes it usable from 2500 2700 MHz. This multi stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Typical Doherty WiMAX Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2B = 275 mA, VG2A = 1.7 Vdc, Pout = 10 Watts Avg., f = 2700 .

MD7IC2755GNR1 Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* On

* Chip Matching (50 O

MD7IC2755NR1-NXP.pdf

MD7IC2755GNR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MD7IC2755GNR1, MD7IC2755NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MD7IC2755GNR1, MD7IC2755NR1

Manufacturer:

NXP ↗

File Size:

1.07 MB

Description:

Rf ldmos wideband integrated power amplifiers.

Note:

This datasheet PDF includes multiple part numbers: MD7IC2755GNR1, MD7IC2755NR1.
Please refer to the document for exact specifications by model.

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