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MMZ09312BT1 Datasheet - Freescale Semiconductor

MMZ09312BT1 Heterojunction Bipolar Transistor

1 μF Chip Capacitors 4.7 μF Chip Capacitor 470 pF Chip Capacitor 100 pF Chip Capacitor Components Not Placed 4.7 pF Chip Capacitor 6.8 pF Chip Capacitor 8.2 nH Chip Inductor 1.2 nH Chip Inductor 33 nH Chip Inductor 22 nH Chip Inductor 3.3 nH Chip Inductor 330 Ω, 1/16 W Chip Resistor 1.5 kΩ, 1/16 W C.

Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev. 1, 2/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09312B is a 2 stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LT.

MMZ09312BT1 Features

* Frequency: 400

* 1000 MHz

* P1dB: 29.6 dBm @ 900 MHz

* Power Gain: 31.7 dB @ 900 MHz

* OIP3: 42 dBm @ 900 MHz

* Active Bias Control (adjustable externally)

* Single 3 to 5 Volt Supply

* Performs Well with Digital Predistortion Systems

MMZ09312BT1 Datasheet (1.22 MB)

MMZ09312BT1 Datasheet Preview — Preview of MMZ09312BT1 PDF

Datasheet Details

Part number:

MMZ09312BT1

Manufacturer:

Freescale Semiconductor

File Size:

1.22 MB

Description:

Heterojunction bipolar transistor.

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Stock and price

Littelfuse Inc

RUEF800

1508 In Stock

Qty : 1000 units

Unit Price : $0.45

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MMZ09312BT1 Heterojunction Bipolar Transistor Freescale Semiconductor

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