MMZ09312BT1 Heterojunction Bipolar Transistor

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MMZ09312B Rev.1, 2/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Effic.
1 μF Chip Capacitors 4.

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Datasheet Specifications

Part number: MMZ09312BT1
Manufacturer: Freescale Semiconductor
File Size: 1.22 MB
Datasheet: MMZ09312BT1_FreescaleSemiconductor.pdf
Description: Heterojunction Bipolar Transistor

Features

* Frequency: 400
* 1000 MHz
* P1dB: 29.6 dBm @ 900 MHz
* Power Gain: 31.7 dB @ 900 MHz
* OIP3: 42 dBm @ 900 MHz
* Active Bias Control (adjustable externally)
* Single 3 to 5 Volt Supply
* Performs Well with Digital Predistortion Systems

Applications

* as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee R at operating voltages from 3 to 5 Volts. The amplifier is housed in a cost
* effective, surface mount QFN plastic package.

MMZ09312BT1 Distributors

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MMZ09312BT1 Heterojunction Bipolar Transistor Freescale Semiconductor

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