MMZ09332BT1 - Heterojunction Bipolar Transistor

NXP

MMZ09332BT1 Datasheet Preview — Preview of MMZ09332BT1 PDF

Datasheet Details

Part number	MMZ09332BT1
Manufacturer	NXP ↗
File Size	1.17 MB
Description	Heterojunction Bipolar Transistor
Datasheet	MMZ09332BT1-NXP.pdf

MMZ09332BT1 Product details

Description

Part Number C1 6.8 pF Chip Capacitor GJM1555C1H6R8DB01ND C2 2.4 pF Chip Capacitor GJM1555C1H2R4DB01ND C3 220 pF Chip Capacitor GRM1555C1H221GA01ND C4 4.7 pF Chip Capacitor GJM1555C1H4R7DB01ND C5 8.2 pF Chip Capacitor GJM1555C1H8R2DB01ND C6, C7, C13 100 pF Chip Capacitors GRM1555C1H101JA01ND C8 2.2 pF Chip Capacitor GJM1555C1H2R2DB01ND C9, C11, C15 1000 pF Chip Capacitors GRM1555C1H102JA01ND C10, C14 1 F Chip Capacitors GRM188R61A105KE15ND C12 3.9 pF Chip Capacitor

Features

Frequency: 130.
1000 MHz.
P1dB: 33 dBm, 450 to 1000 MHz.
OIP3: up to 48 dBm @ 900 MHz.
Excellent Linearity.
Active Bias Control (adjustable externally).
Single 3 to 5 V Supply.
Single--ended Power Detector.
Cost--effective 12--pin 3 mm QFN Surface Mount Plastic Package Power VBA1 VBA2 VBIAS Down VCC1 ACTIVE BIAS WITH POWER DOWN Document Number: MMZ09332B Rev. 0, 8/2015 MMZ09332BT1 130.
1000 MHz, 30 dB, 33 dBm InGaP HBT LINEAR.

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Published: Jul 13, 2020 |