* Frequency: 130
* 1000 MHz
* P1dB: 33 dBm, 450 to 1000 MHz
* OIP3: up to 48 dBm @ 900 MHz
* Excellent Linearity
* Active Bias Control (adjustable externally)
* Single 3 to 5 V Supply
* Single
* ended Power Detector
* Cost
* effective 12
* pin
MMZ09332BT1 Datasheet (1.17 MB)
MMZ09332BT1
1.17 MB
Heterojunction bipolar transistor.
Freescale Semiconductor Technical Data
Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ09332B is.
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