MMZ09332BT1 Heterojunction Bipolar Transistor

NXP

Description

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ09332B is.
Part Number C1 6.

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Datasheet Specifications

Part number: MMZ09332BT1
Manufacturer: NXP ↗
File Size: 1.17 MB
Datasheet: MMZ09332BT1-NXP.pdf
Description: Heterojunction Bipolar Transistor

Features

* Frequency: 130
* 1000 MHz
* P1dB: 33 dBm, 450 to 1000 MHz
* OIP3: up to 48 dBm @ 900 MHz
* Excellent Linearity
* Active Bias Control (adjustable externally)
* Single 3 to 5 V Supply
* Single
* ended Power Detector
* Cost
* effective 12
* pin

Applications

* It provides exceptional linearity for LTE and W
* CDMA air interfaces with an ACPR of
* 50 dBc at an output power of up to 23 dBm, covering frequencies from 130 to 1000 MHz. It operates from a supply voltage of 3 to 5 volts. The amplifier requires minimal external matching and offers s

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MMZ09332BT1 Heterojunction Bipolar Transistor NXP

NXP MMZ09332BT1-like datasheet