MMZ27333BT1

High Gain Power Amplifier

NXP

MMZ27333BT1 Features

* P1dB: up to 33 dBm

* Gain: More than 35 dB

* 5 V Supply

* Excellent Linearity

* High Efficiency

* Single

* ended Power Detector

* Band Tunable

* Cost

* effective 24

* pin, 4 mm QFN surface mount plastic package Docu

MMZ27333BT1 General Description

Part Number C1, C4 22 pF Chip Capacitors 04023K220BBS C2 2.0 pF Chip Capacitor 04023J2R0BBS C3 1.8 pF Chip Capacitor 04023J1R8BBS C5, C11, C13, C15 1000 pF Chip Capacitors GCM155R71E103KA37D C6, C14 1 μF Chip Capacitors GRM188R61A105KA61D C7 1.5 pF Chip Capacitor GRM1555C1H1R5BA91.

MMZ27333BT1 Datasheet (1.08 MB)

MMZ27333BT1 Datasheet Preview — Preview of MMZ27333BT1 PDF

Datasheet Details

Part number:

MMZ27333BT1

Manufacturer:

NXP ↗

File Size:

1.08 MB

Description:

High gain power amplifier.
NXP Semiconductors Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ27333B is a versatile 3

*st.

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MMZ27333BT1 High Gain Power Amplifier NXP

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MMZ27333BT1 Features

MMZ27333BT1 General Description

Datasheet Details

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Description:

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