MMZ27333BT1 High Gain Power Amplifier

NXP

Description

NXP Semiconductors Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ27333B is a versatile 3 *st.
Part Number C1, C4 22 pF Chip Capacitors 04023K220BBS C2 2.

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Datasheet Specifications

Part number: MMZ27333BT1
Manufacturer: NXP ↗
File Size: 1.08 MB
Datasheet: MMZ27333BT1-NXP.pdf
Description: High Gain Power Amplifier

Features

* P1dB: up to 33 dBm
* Gain: More than 35 dB
* 5 V Supply
* Excellent Linearity
* High Efficiency
* Single
* ended Power Detector
* Band Tunable
* Cost
* effective 24
* pin, 4 mm QFN surface mount plastic package Docu

Applications

* for macro and micro base stations and final
* stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 35 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networ

MMZ27333BT1 Distributors

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MMZ27333BT1 High Gain Power Amplifier NXP

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