MMZ27333BT1 Datasheet - NXP

MMZ27333BT1 High Gain Power Amplifier

Part Number C1, C4 22 pF Chip Capacitors 04023K220BBS C2 2.0 pF Chip Capacitor 04023J2R0BBS C3 1.8 pF Chip Capacitor 04023J1R8BBS C5, C11, C13, C15 1000 pF Chip Capacitors GCM155R71E103KA37D C6, C14 1 μF Chip Capacitors GRM188R61A105KA61D C7 1.5 pF Chip Capacitor GRM1555C1H1R5BA91.

NXP Semiconductors Technical Data 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ27333B is a versatile 3 stage power amplifier targeted at driver and pre driver applications for macro and micro base stations and final stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 35 dB. The device operates off a 5 V supply, and its bias currents and portio.

MMZ27333BT1 Features

* P1dB: up to 33 dBm

* Gain: More than 35 dB

* 5 V Supply

* Excellent Linearity

* High Efficiency

* Single

* ended Power Detector

* Band Tunable

* Cost

* effective 24

* pin, 4 mm QFN surface mount plastic package Docu