MMZ25333B

InGaP HBT Linear Amplifier

NXP

MMZ25333B Features

* P1dB: up to 33 dBm

* Gain: More than 40 dB

* 5 V Supply

* Excellent Linearity

* High Efficiency

* Single

* ended Power Detector

* Band Tunable NXP Semiconductors 4 Functional block diagram VCC1/ RFout1 RFin2 VCC2 PDET RFin1 BIAS

MMZ25333B General Description

The MMZ25333B is a versatile 3

*stage power amplifier targeted at driver and pre

*driver applications for macro and micro base stations and final

*stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain.

MMZ25333B Datasheet (348.51 KB)