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MMZ25333B InGaP HBT Linear Amplifier

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Description

MMZ25333B InGaP HBT Linear Amplifier Rev.2 * 4 April 2024 Product data sheet 1 General .
The MMZ25333B is a versatile 3. stage power amplifier targeted at driver and pre. driver applications for macro and micro base stations.

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Datasheet Specifications

Part number
MMZ25333B
Manufacturer
NXP ↗
File Size
348.51 KB
Datasheet
MMZ25333B-NXP.pdf
Description
InGaP HBT Linear Amplifier

Features

* P1dB: up to 33 dBm
* Gain: More than 40 dB
* 5 V Supply
* Excellent Linearity
* High Efficiency
* Single
* ended Power Detector
* Band Tunable NXP Semiconductors 4 Functional block diagram VCC1/ RFout1 RFin2 VCC2 PDET RFin1 BIAS

Applications

* for macro and micro base stations and final
* stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 40 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networ

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