MMZ25332BT1 Datasheet - NXP

MMZ25332BT1 Heterojunction Bipolar Transistor

1 F Chip Capacitors Part Number GRM155R61A105KE15 C2, C5, C7, C8, C10, C11, C15 Components Not Placed C3 470 pF Chip Capacitor GRM1555C1H471JA01 C4 8.2 pF Chip Capacitor 04023J8R2BBS C6 4.7 F Chip Capacitor GRM188R60J475KE19D C9, C14 22 pF Chip Capacitors 04023J22R0BBS C13 3.3 pF .

NXP Semiconductors Technical Data Document Number: MMZ25332B Rev. 3, 11/2017 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a 2 stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W CDMA, TD SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W CDMA air interfaces with an ACPR of 50 dBc at an output.

MMZ25332BT1 Features

* Frequency: 1500

* 2800 MHz

* P1dB: 33 dBm @ 2500 MHz

* Power gain: 26.5 dB @ 2500 MHz

* OIP3: 48 dBm @ 2500 MHz

* EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)

* Active bias control (adjustable externally)

* Power down control via VBIAS pin

* Class 3A HBM ESD ratin

MMZ25332BT1-NXP.pdf