MMZ25332BT1 - Heterojunction Bipolar Transistor

NXP

MMZ25332BT1 Datasheet Preview — Preview of MMZ25332BT1 PDF

Datasheet Details

Part number	MMZ25332BT1
Manufacturer	NXP ↗
File Size	580.41 KB
Description	Heterojunction Bipolar Transistor
Datasheet	MMZ25332BT1-NXP.pdf

MMZ25332BT1 Product details

Description

1 F Chip Capacitors Part Number GRM155R61A105KE15 C2, C5, C7, C8, C10, C11, C15 Components Not Placed C3 470 pF Chip Capacitor GRM1555C1H471JA01 C4 8.2 pF Chip Capacitor 04023J8R2BBS C6 4.7 F Chip Capacitor GRM188R60J475KE19D C9, C14 22 pF Chip Capacitors 04023J22R0BBS C13 3.3 pF Chip Capacitor 04023J3R3BBS L1 12 nH Chip Inductor 0603HC--12NXJLW L2 6.8 nH Chip Inductor 0603HC--6N8XJLW R1 1.2 k, 1/16 W Chip Resistor RC0402JR--071K2L R2 330 , 1/16 W Chip Resistor

Features

Frequency: 1500.
2800 MHz.
P1dB: 33 dBm @ 2500 MHz.
Power gain: 26.5 dB @ 2500 MHz.
OIP3: 48 dBm @ 2500 MHz.
EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g).
Active bias control (adjustable externally).
Power down control via VBIAS pin.
Class 3A HBM ESD rating.
Single 3 to 5 V supply.
Single--ended power detector.
Cost--effective 12--pin, 3 mm QFN surface mount plastic package Table 1. Typical CW Performance (1) Characteristic 1800 2500.

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Published: Jul 13, 2020 |