MMZ25332BT1 Heterojunction Bipolar Transistor

NXP

Description

NXP Semiconductors Technical Data Document Number: MMZ25332B Rev.3, 11/2017 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficienc.
1 F Chip Capacitors Part Number GRM155R61A105KE15 C2, C5, C7, C8, C10, C11, C15 Components Not Placed C3 470 pF Chip Capacitor GRM1555C1H471JA0.

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Datasheet Specifications

Part number: MMZ25332BT1
Manufacturer: NXP ↗
File Size: 580.41 KB
Datasheet: MMZ25332BT1-NXP.pdf
Description: Heterojunction Bipolar Transistor

Features

* Frequency: 1500
* 2800 MHz
* P1dB: 33 dBm @ 2500 MHz
* Power gain: 26.5 dB @ 2500 MHz
* OIP3: 48 dBm @ 2500 MHz
* EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
* Active bias control (adjustable externally)
* Power down control via VBIAS pin
* Class 3A HBM ESD ratin

Applications

* It provides exceptional linearity for LTE and W
* CDMA air interfaces with an ACPR of
* 50 dBc at an output power of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external

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MMZ25332BT1 Heterojunction Bipolar Transistor NXP

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