MMZ38333BT1 Datasheet - NXP

MMZ38333BT1 3.8 GHz Linear Power Amplifier and BTS Driver

Part Number C1, C4, C5, C6 5.6 pF Chip Capacitor 04023J5R6BBW C2 2 pF Chip Capacitor 04023J2R0BBW C3 0.6 pF Chip Capacitor 04023J0R6BBW C7, C8 1 μF Chip Capacitor GRM188R61A105KE15 C9, C11, C12, C13 1 nF Chip Capacitor GCM155R71E103KA37 C10 470 pF Chip Capacitor GRM1555C1H471JA01 .

NXP Semiconductors Technical Data 3.8 GHz Linear Power Amplifier and BTS Driver High Efficiency/Linearity Amplifier The MMZ38333B is a 3 stage high linearity InGaP HBT broadband amplifier designed for small cells and LTE base stations. It provides exceptional linearity for LTE air interface with an ACPR of 48 dBc at an output power greater than 22.3 dBm, covering frequencies from 3400 to 3800 MHz. It operates off a 5 V supply voltage. The amplifier is internally pre ma.

MMZ38333BT1 Features

* Frequency: 3400

* 3800 MHz

* P1dB: 31.7 dBm @ 3600 MHz

* Power gain: 37 dB @ 3600 MHz

* Active bias control (adjustable externally)

* Power down control via VBIAS

* 5 volt supply

* Cost

* effective 24

* pin, 4 mm QFN surface

MMZ38333BT1-NXP.pdf