MWE6IC9100GNR1 Datasheet - Freescale Semiconductor

MWE6IC9100GNR1 RF LDMOS Wideband Integrated Power Amplifiers

Part Number C1, C2 10 pF Chip Capacitors ATC100B100GT500XT C3, C4, C5 3.9 pF Chip Capacitors ATC100B3R9BT500XT C6 0.5 pF Chip Capacitor ATC100B0R5BT500XT C7, C8, C9, C10, C11, C12, C13, C14 33 pF Chip Capacitors ATC100B330JT500XT C15, C16, C17, C18, C19, C20, C21 6.8 μF Chip Capacitor.

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on chip matching that makes it usable from 869 to 960 MHz. This multi stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Final Application Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Wat.

MWE6IC9100GNR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* On

* Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)

MWE6IC9100GNR1_FreescaleSemiconductor.pdf

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Datasheet Details

Part number:

MWE6IC9100GNR1

Manufacturer:

Freescale Semiconductor

File Size:

1.31 MB

Description:

Rf ldmos wideband integrated power amplifiers.

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MWE6IC9100GNR1 MWE6IC9100GNR1 LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor

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